Pressure sensor and manufacturing method thereof
AssigneeKorea Electronics Technology Institute
InventorsSuk Won JUNG, Nam Kyu CHO
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Abstract
Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.
Claims9
A silicon nanowire pressure sensor comprising:
- a lower substrate having a diaphragm recess in a lower surface thereof;
- an upper substrate having a first surface attached to an upper surface of the lower substrate;
- a resistive portion including a silicon nanowire formed on a first surface of the upper substrate and exposed on a second surface of the upper substrate;
- and
- a diaphragm region formed by etching a center portion of the second surface of the upper substrate with alignment reference of the resistive portions,
- wherein the diaphragm recess is larger than the diaphragm region.
A method of manufacturing a silicon nanowire pressure sensor, the method comprising:
- a first step of preparing an upper substrate on which resistive portions including silicon nanowires are formed;
- a second step of preparing a lower substrate;
- a third step of attaching a first surface of the upper substrate to an upper surface of the lower substrate;
- a fourth step of etching a center portion of a second surface of the upper substrate with alignment reference of the resistive portions;
- and
- a fifth step of etching a lower surface of the lower substrate to form a diaphragm recess that is larger than the diaphragm region.
Dependencies are inferred from the claim text.