Semiconductor light-emitting apparatus having multiple semiconductor light-emitting elements and its manufacturing method
AssigneeStanley Electric Co., Ltd.
InventorsMitsunori HARADA, Kaori TACHIBANA
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Abstract
A semiconductor light-emitting apparatus includes: a wiring substrate; multiple semiconductor light-emitting elements mounted via multiple eutectic layers, respectively, on the wiring substrate; and a wavelength-converting plate via multiple transparent adhesive layers on upper surfaces of the semiconductor light-emitting elements, respectively. A standard deviation of thicknesses of the transparent adhesive layers is smaller than a standard deviation of thicknesses of the eutectic layers.
Claims15
A semiconductor light-emitting apparatus comprising:
- a wiring substrate;
- multiple semiconductor light-emitting elements mounted via multiple eutectic layers, respectively, on said wiring substrate;
- and
- a wavelength-converting plate via multiple transparent adhesive layers on upper surfaces of said semiconductor light-emitting elements, respectively,
- a standard deviation of thicknesses of said transparent adhesive layers being smaller than a standard deviation of thicknesses of said eutectic layers.
A method for manufacturing a semiconductor light-emitting apparatus, comprising:
- forming multiple eutectic material layers on multiple first electrode patterns, respectively, of a wiring substrate;
- mounting multiple semiconductor light-emitting elements with second electrode patterns on its lower surface on said multiple eutectic material layers, respectively;
- mounting a plate on said multiple semiconductor light-emitting elements via multiple eutectic temperature liquid layers, respectively, said multiple eutectic temperature liquid layers maintaining a liquid state even at a eutectic temperature of said multiple eutectic material layers;
- heating and cooling said multiple eutectic material layers and said multiple temperature liquid layers so that said multiple eutectic material layers are cured to multiple eutectic layers with said multiple first electrode patterns and said multiple second electrode patterns, while said plate is adhered via said multiple eutectic temperature liquid layers to said multiple semiconductor light-emitting elements by the surface tension phenomenon.
Dependencies are inferred from the claim text.