Optoelectronic device comprising three-dimensional diodes

An optoelectronic device, comprising:

• a support including a rear surface and a front surface opposite each other;
• a plurality of nucleation conductive strips forming first polarization electrodes, distinct from each other and resting on the front surface, made of an electrically conductive material configured for the growth of first doped regions of diodes;
• an intermediate insulating layer covering the nucleation conductive strips, and including through-openings opening onto the nucleation conductive strips;
• a plurality of diodes, each of the plurality of diodes including a first three-dimensional doped region and a second doped region disposed to form a p-n junction, the first doped regions being in contact with the nucleation conductive strips through the through-openings and extending along a longitudinal axis substantially orthogonal to the front surface;
• and
• a plurality of top conductive strips forming second polarization electrodes, distinct from each other and resting on the intermediate insulating layer, each top conductive strip being disposed to be in contact with second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.