US 2019/0172953 A1 · THIN FILM TRANSISTOR, MANUFACTURING METHOD, ARRAY SUBSTRATE, DISPLAY PANEL, AND DEVICE

Abstract

The present disclosure discloses a TFT, a manufacturing method, an array substrate, a display panel, and a device. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.

Claims13

Dependent claims

A thin film transistor, comprising:

a substrate;
a hydrogen-containing buffer layer, located on the substrate;
an oxide semiconductor layer, located on the buffer layer, comprising a conductor region and a semiconductor region;
a source or drain, located on the conductor region, and electrically connected to the conductor region;
and
a gate structure, located on the semiconductor region.

3 more elements

A method for manufacturing a TFT, comprising:

forming a hydrogen-containing buffer layer on a substrate;
forming an oxide semiconductor layer on the buffer layer;
allowing hydrogen in the buffer layer to enter into a portion of the oxide semiconductor layer such that the oxide semiconductor layer is plasmon activated, the plasmon generated oxide semiconductor layer being formed as a conductor region, and the plasmon non-generated oxide semiconductor layer being formed as a semiconductor region;
forming a source or drain on the conductor region, the source or drain being electrically connected to the conductor region;
and
forming a gate structure on the semiconductor region.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/992,909Filed 30 May 2018

Priority

CN 201711274716.06 Dec 2017

Published

6 Jun 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 30/6713
Having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device:…
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 86/0221
Of multiple TFTs: comprising manufacture, treatment or patterning of TFT semiconductor bodies
H10D 86/0231
Of multiple TFTs: using masks, e.g. half-tone masks

Thin film transistor, manufacturing method, array substrate, display panel, and device

Life of this patent

Thin film transistor, manufacturing method, array substrate, display panel, and device

Life of this patent

Abstract

Claims13