Finfet transistor with channel stress induced via stressor material inserted into fin plug region enabled by backside reveal

A method of forming an integrated circuit device comprising:

• forming a transistor body on a substrate projecting from a dielectric layer;
• forming a transistor device in a first portion of the transistor body on a first side of the substrate;
• and
• dividing the transistor body into at least the first portion and a second portion with a plug in the transistor body, the plug comprising a material operable to impart a stress on the first portion of the body, wherein the material is introduced through a second side of the substrate.

A method of forming an integrated circuit device comprising:

• forming a plurality of transistor bodies on a substrate projecting from a dielectric layer;
• dividing each of the plurality of transistor bodies into at least a first portion and a second portion with a plug in the respective transistor body;
• forming a transistor device in at least one of the first portion and the second portion of each of the plurality of transistor bodies on a first side of the substrate;
• and
• replacing the plug with a material through a second side of the substrate, wherein the material is operable to impart a stress on the at least one of the first portion and the second portion of the plurality of transistor bodies.