High Voltage Switching Device

At least one integrated circuit high voltage switching device, including:

• (a) a transistor structure including a source, a gate, an internal drain, and a channel between the source and internal drain;
• (b) a modulated resistance region co-fabricated with the transistor structure and electrically connected to the internal drain of the transistor structure;
• (c) at least one voltage-drop modulation gate, fabricated with respect to the modulated resistance region so as to control the resistance of the modulated resistance region;
• and
• (d) a drain electrically connected to the modulated resistance region and configured to be coupled to a voltage source;
• wherein (1) when a first bias voltage is applied to the at least one voltage-drop modulation gate and the FET transistor structure is switched ON, the modulated resistance region provides a low-resistance conduction path current between the source and the drain, and (2) when a second bias voltage is applied to the at least one voltage-drop modulation gate, the modulated resistance region is sufficiently depleted so as to provide a high-resistance to conduction of current between the drain and the internal drain and thereby drop an applied voltage on the drain to less than the breakdown voltage BVDSS of the FET transistor structure.

At least one integrated circuit high voltage switching device, including:

• (a) a transistor structure including a source, a gate, an internal drain, and a channel between the source and internal drain;
• (b) a modulated resistance region co-fabricated with the transistor structure and electrically connected to the internal drain of the transistor structure;
• (c) at least one voltage-drop modulation gate, fabricated with respect to the modulated resistance region so as to control the resistance of the modulated resistance region;
• and
• (d) a drain electrically connected to the modulated resistance region and configured to be coupled to a voltage source;
• wherein the modulated resistance region comprises a semiconductor region of the first polarity, doped up to about 5 orders of magnitude less than the source and drain.

At least one integrated circuit high voltage switching device fabricated on a silicon-on-insulator substrate, including:

• (a) a transistor structure including a source, a gate, an internal drain, and a channel between the source and internal drain;
• (b) a modulated resistance region co-fabricated with the transistor structure and electrically connected to the internal drain of the transistor structure;
• (c) at least one voltage-drop modulation gate, fabricated with respect to the modulated resistance region so as to control the resistance of the modulated resistance region;
• (d) a drain electrically connected to the modulated resistance region and configured to be coupled to a voltage source;
• (e) a deep well region proximate to at least a portion of the modulated resistance region;
• and
• (f) at least one substrate contact in electrical contact with the deep well region for applying a bias voltage to the deep well region.

At least one integrated circuit high voltage switching device, including:

• (a) a transistor structure including a source, a gate, an internal drain, and a channel between the source and internal drain;
• (b) a modulated resistance region co-fabricated with the transistor structure and electrically connected to the internal drain of the transistor structure;
• (c) at least one voltage-drop modulation gate, fabricated with respect to the modulated resistance region so as to control the resistance of the modulated resistance region;
• and
• (d) a drain electrically connected to the modulated resistance region and configured to be coupled to a voltage source;
• wherein the modulated resistance region comprises a semiconductor region of the first polarity, doped to at least about 2 orders of magnitude less than the source and drain.