Back to results
US 2019/0172945 A1Published application
Folded channel trench mosfet
AssigneeAlpha and Omega Semiconductor Incorporated
InventorSik Lui
Life of this patent
Estimating the term…
Abstract
A trench MOSFET device is fabricated with body source regions that undulate along a channel width direction of the MOSFET device such that the body region and source region have variations in depth along the channel width direction. The undulations increase a channel width of the MOSFET device.
Claims13
A method for fabricating a trench MOSFET device, comprising:
- forming a lightly doped epitaxial layer of a first conductivity type on a heavily doped semiconductor substrate of the first conductivity type;
- forming an gate electrode into the lightly doped epitaxial layer;
- forming a body region of a second conductivity type opposite to the first conductivity type provided in portions of the lightly doped epitaxial layer, wherein the body region has a first undulation along the channel width direction;
- and
- forming a source region of the first conductivity type provided in top portions of the body region, wherein the source region has a second undulation along the channel width direction above the first undulation.
2 more elements
Dependencies are inferred from the claim text.