Semiconductor device and method of manufacturing same

A method of manufacturing a semiconductor device, the method comprising:

• epitaxially growing a first epitaxial layer of a first conductivity type on a top surface of a drift layer of the first conductivity type;
• selectively implanting impurity ions of the first conductivity type into the first epitaxial layer so as to be of a higher impurity density than a impurity density of the first epitaxial layer, thereby forming a current spreading region in an active region and forming a channel stopper region on an outer edge of a termination region surrounding the active region;
• epitaxially growing a base region of a second conductivity type on the first epitaxial layer;
• selectively implanting second conductivity type impurity ions into the base region, thereby selectively embedding a base contact region of the second conductivity type in a top part of the base region with a higher impurity density than the base region;
• and
• implanting first conductivity type impurity ions into an entire surface of the base region including the embedded base contact region at a dosage lower than a dosage of the second conductivity type impurity ions implanted to form the base contact region, thereby forming an electrode contact region of the first conductivity type in a top part of the base region that is laterally in contact with the base contact region.