Thin film transistor and manufacturing method thereof, array substrate and display panel

Abstract

A thin film transistor and a manufacturing method thereof, an array substrate and a display panel are provided, and the manufacturing method includes: forming an amorphous silicon layer on a base substrate, and simultaneously doping a first predetermined element into the amorphous silicon layer; converting the amorphous silicon layer including the first predetermined element into a polysilicon layer which includes a channel region serving as a channel of the thin film transistor, a first region located at a side of the channel region and configured to be connected with a source electrode, and a second region located at another side of the channel region and configured to be connected with a drain electrode; and implanting a second predetermined element into the first region and the second region by an ion implantation process to form a doped source region and a doped drain region, respectively.

Dependencies are inferred from the claim text.