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US 2019/0172930 A1Published application
Hybrid active-field gap extended drain mos transistor
AssigneeTexas Instruments Incorporated
InventorsSameer P. PENDHARKAR, John LIN
Life of this patent
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Abstract
An integrated circuit includes an extended drain MOS transistor with parallel alternating active gap drift regions and field gap drift regions. The extended drain MOS transistor includes a gate having field plates over the field gap drift regions. The extended drain MOS transistor may be formed in a symmetric nested configuration. A process for forming an integrated circuit containing an extended drain MOS transistor provides parallel alternating active gap drift regions and field gap drift regions with a gate having field plates over the field gap drift regions.
Claims1
An integrated circuit, comprising:
- an extended drain metal-oxide semiconductor (EDMOS) transistor, including:
- a channel region positioned in a semiconductor substrate;
- an extended drain positioned in the semiconductor substrate, the extended drain including a drift region having field gap drift regions and active gap regions alternating with the field gap drift regions, the drift region abutting the channel region;
- field oxide structures positioned adjacent to the field gap drift regions and opposing the channel region;
- and
- a drain contact diffused region positioned on the extended drain and having a plurality of lateral projections extending toward the channel region, the drain contact diffused region having a higher doping concentration than the extended drain, and the lateral projections interleaving with the field oxide structures;
3 more elements
Dependencies are inferred from the claim text.