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US 2019/0172917 A1Published application
Transistor Device with a Field Electrode that Includes Two Layers
AssigneeInfineon Technologies Austria AG
InventorThomas Feil
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Abstract
Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes first and second layers.
Claims24
A transistor device, comprising:
- a semiconductor body comprising a first surface;
- a source region;
- a drift region;
- a body region being arranged between the source region and the drift region;
- a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric;
- and
- a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric,
- wherein the field electrode comprises a first layer and a second layer,
- wherein the first layer adjoins the field electrode dielectric,
- wherein the second layer adjoins the first layer,
- wherein a width direction of the field electrode is parallel to the first surface,
- wherein the first layer comprises two vertical sections that extend in a vertical direction that is perpendicular to the first surface, and
- wherein, in the width direction of the field electrode, the second layer is laterally contained between two vertical sections of the first layer.
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A method, comprising:
- forming a source region, a body region and a drift region in a semiconductor body such that the body region is arranged between the source region and the drift region;
- forming a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric;
- and
- forming a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric such that the field electrode includes at least two layers,
- wherein the at least two layers comprise a first layer adjoining the field electrode dielectric and a second layer adjoining the first layer,
- wherein the semiconductor body comprises a first surface,
- wherein a width direction of the field electrode is parallel to the first surface,
- wherein the first layer comprises two vertical sections that extend in a vertical direction that is perpendicular to the first surface, and
- wherein, in the width direction of the field electrode, the second layer is laterally contained between two vertical sections of the first layer.
6 more elements
Dependencies are inferred from the claim text.