Power Semiconductor Device Having a Trench with Control and Field Electrode Structures

A power semiconductor device, comprising:

• a semiconductor body including a trench that extends into the semiconductor body along an extension direction and comprising an insulator;
• and
• a first electrode structure and a second electrode structure formed from a monolithic electrode zone within the trench,
• wherein the first electrode structure and the second electrode structure of the monolithic electrode zone are arranged separately and electrically insulated from each other within the trench,
• wherein the first electrode structure is arranged in an upper part of the trench and the second electrode structure is arranged in a lower part of the trench,
• wherein the first electrode structure and the second electrode structure are vertically misaligned in the trench.

A power semiconductor device, comprising:

• a semiconductor body coupled to a first load terminal and a second load terminal and configured to conduct a load current between the first load terminal and the second load terminal;
• a trench extending into the semiconductor body along an extension direction and comprising an insulator;
• a control electrode structure included in the trench and configured to control the load current;
• and
• a field electrode structure included in the trench and arranged separately and electrically insulated from the first electrode structure,
• wherein the control electrode structure is disposed along sidewalls of the trench in an upper part of the trench,
• wherein the field electrode structure is spaced inward from and below the control electrode structure in a lower part of the trench,
• wherein the control electrode structure and the field electrode structure are electrically connected to different potentials.