P-type oxide, p-type oxide-producing composition, method for producing p-type oxide, semiconductor device, display device, image display apparatus, and system

A p-type oxide, wherein the p-type oxide is represented by the following compositional formula:

• xAO.yCu2O
• where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, and wherein
• in a case that A is any one of Mg, Ca and Ba or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, x and y satisfy the following expressions (i) and (ii):
• 0≤x<x<100 and (i)
• x+y=100, (ii)
• in a case that A is Sr only, x and y satisfy each of the following expressions (iii) and (iv):
• either 0.1≤x<50 or 50<x<100;
• and (iii)
• x+y=100 (iv)
• wherein the p-type oxide has no diffraction peak between 10° and 70° by X-ray diffraction.