Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJee Yong Kim, Jung Hwan Lee
Life of this patent
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Abstract
A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.
Claims20
A semiconductor device comprising:
- a substrate including a recess below an isolation region, the substrate defining a side portion of the recess to include a plurality of stepped portions;
- a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate;
- a channel structure passing through the plurality of gate electrodes;
- and
- the isolation region passing through the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.
A semiconductor device comprising:
- a substrate including a recess, the substrate defining the recess to include a first region, a second region and a third region having different widths;
- a stack structure including a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the substrate;
- and
- a common source line passing through the stack structure to contact the substrate at the first region of the recess, the common source line extending on the substrate in a direction.
A semiconductor device comprising:
- a substrate including a recess, the substrate defining the recess to include a first region having a first width, a second region having a second width greater than the first width, and a third region having a third width greater than the second width;
- a plurality of stack structures each including a plurality of gate electrodes and a plurality of insulating layers alternately stacked on the substrate;
- a plurality of channel structures passing through the plurality of stack structures to extend in a direction perpendicular to an upper surface of the substrate;
- and
- a plurality of spacers between the stack structures, the plurality of spacers contacting the substrate at the third region and extending on the substrate in a direction.
Dependencies are inferred from the claim text.