Capacitor structures, decoupling structures and semiconductor devices including the same

An integrated circuit device, comprising:

• a decoupling structure having a first capacitor and a second capacitor that is different from the first capacitor, the decoupling structure comprising:
• a first plurality of conductive patterns that each extend in a vertical direction;
• a second plurality of conductive patterns that each extend in the vertical direction;
• a horizontally disposed unitary supporting structure that structurally supports the first plurality of conductive patterns and the second plurality of conductive patterns;
• and
• a common electrode disposed between ones of the first plurality of conductive patterns and between ones of the second plurality of conductive patterns,
• wherein the first plurality of conductive patterns and the common electrode comprise electrodes of the first capacitor, and the second plurality of conductive patterns and the common electrode comprise electrodes of the second capacitor,
• wherein the first plurality of conductive patterns and the second plurality of conductive patterns are horizontally spaced apart from each other in a first direction with a separation region therebetween,
• wherein the decoupling structure is mounted on an underlying lower structure so that the lower structure and the decoupling structure are stacked in the vertical direction, and the unitary supporting structure comprises a plurality of openings when viewed from above, and
• wherein none of the plurality of openings extend into the separation region.