Semiconductor Device and Method of Forming Substrate Including Embedded Component with Symmetrical Structure
AssigneeSTATS ChipPAC Pte. Ltd.
InventorsJinHee Jung, HyungSang Park, SungSoo Kim
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AssigneeSTATS ChipPAC Pte. Ltd.
InventorsJinHee Jung, HyungSang Park, SungSoo Kim
Estimating the term…
A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is disposed over the first conductive layer. The second conductive layer lies in a plane between a top surface of the semiconductor component and a bottom surface of the semiconductor component. A third conductive layer is formed over the semiconductor component opposite the first conductive layer. The semiconductor device includes a symmetrical structure. A first insulating layer is formed between the first conductive layer and semiconductor component. A second insulating layer is formed between the semiconductor component and third conductive layer. A height of the first insulating layer between the first conductive layer and semiconductor component is between 90% and 110% of a height of the second insulating layer between the semiconductor component and third conductive layer. The semiconductor component includes a passive device.
A method of making a semiconductor device, comprising:
A method of making a semiconductor device, comprising:
A method of making a semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.