Semiconductor Resistor Structure And Method For Making

A method of fabricating an integrated circuit, the method comprising:

• forming a polysilicon structure on a substrate, the polysilicon structure including first and second ends spaced from one another and an intermediate region between the first and second ends;
• forming first and second doped regions within the polysilicon structure proximate the first and second ends of the polysilicon structure;
• forming first and second silicide structures on the polysilicon structure proximate the first and second ends of the polysilicon structure, the first and second silicide structures being spaced apart from each other on the polysilicon structure;
• and
• forming at least one intermediate silicide structure on a portion of the intermediate region of the polysilicon structure between the first and second ends, the intermediate metal-semiconductor compound structure having a depth less than a depth of the first and second doped regions.

An integrated circuit, comprising:

• a resistor region of a semiconductor substrate, the resistor region having a length dimension with first and second ends spaced from one another and an intermediate region between the first and second ends;
• an oxide structure formed on or in the semiconductor substrate surrounding the resistor region of the semiconductor substrate;
• first and second doped regions within the semiconductor substrate proximate the first and second ends of the semiconductor substrate;
• first and second metal-semiconductor compound structures on the first and second ends of the resistor region, the first and second metal-semiconductor compound structures being spaced apart from each other along the length dimension of the resistor region;
• and
• at least one intermediate metal-semiconductor compound structure on a portion of the intermediate region of the resistor region between the first and second ends, the intermediate metal-semiconductor compound structure having a depth less than a depth of the first and second doped regions.