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AssigneeAvalanche Technology, Inc.
InventorsHongxin Yang, Woojin Kim, Yiming Huai
Estimating the term…
The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. The two-terminal selector element includes a first electrode and a second electrode with a volatile switching layer interposed therebetween. The second electrode is deposited on top of the volatile switching layer during fabrication. The first electrode has a composition comprising a metal element and the second electrode has a composition comprising the metal element and aluminum element. The metal element may be silver, copper, or nickel. The volatile switching layer may have a composite structure comprising a plurality of conductive particles embedded in an insulating matrix. Alternatively, the volatile switching layer may have a multilayer structure comprising one or more conductive layers interleaved with two or more insulating layers. The memory element may include a magnetic tunnel junction.
A memory device comprising an array of memory cells, each of said memory cells including a memory element connected to a two-terminal selector element, said two-terminal selector element comprising a first electrode and a second electrode with a volatile switching layer interposed therebetween, said first electrode having a composition comprising a metal element and said second electrode having a composition comprising said metal element and aluminum element.
Dependencies are inferred from the claim text.