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US 2019/0172870 A1Published application
Image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Wei CHIA, Chun-Hao CHOU, Kai-Chun HSU, Kuo-Cheng LEE, Shyh-Fann TING
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Abstract
An image sensor includes a semiconductor substrate, a gate dielectric layer over the semiconductor substrate, a gate electrode over the gate dielectric layer, and a protection oxide film in contact with a top surface of the gate electrode. A top surface of the protection oxide film is free from contact with a hard mask comprising nitrogen
Claims20
An image sensor, comprising:
- a semiconductor substrate;
- a gate dielectric layer over the semiconductor substrate;
- a gate electrode over the gate dielectric layer;
- and
- a protection oxide film in contact with a top surface of the gate electrode, wherein a top surface of the protection oxide film is free from contact with a hard mask comprising nitrogen.
2 more elements
An image sensor, comprising:
- a semiconductor substrate;
- a gate dielectric layer over the semiconductor substrate;
- a gate electrode over the gate dielectric layer;
- a protection oxide film over a top surface of the gate electrode;
- and
- a sidewall oxide layer over a sidewall of the gate electrode, wherein the protection oxide film is thicker than the sidewall oxide layer.
3 more elements
An image sensor, comprising:
- a semiconductor substrate;
- a gate dielectric layer over the semiconductor substrate;
- a gate electrode over the gate dielectric layer;
- and
- a protection oxide film over a top surface of the gate electrode, wherein the protection oxide film has a thickness in a range from about 40 angstroms to about 60 angstroms.
2 more elements
Dependencies are inferred from the claim text.