US 2019/0172869 A1Published application

Solid-state imaging apparatus, and electronic apparatus

AssigneeSony Semiconductor Solutions Corporation

InventorKAZUYOSHI YAMASHITA

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Abstract

The present technology relates to a solid-state imaging apparatus and an electronic apparatus that makes it possible to improve coloration and improve image quality. The solid-state imaging apparatus is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively. The present technology can be applied to, for example, a CMOS image sensor.

Claims6

Dependent claims

A solid-state imaging apparatus, comprising:

a pixel array unit having a first pixel and a second pixel arranged two-dimensionally, wherein
the first pixel includes:
a first photoelectric conversion region that generates electric charges according to a first amount of incident light;
a first region that receives the electric charges generated by the first photoelectric conversion region, wherein the first region includes first impurities;
and
a first gate electrode that transfers the electric charges generated by the first photoelectric conversion region to the first region,
the second pixel includes:
a second photoelectric conversion region that generates electric charges according to a second amount of incident light;
a second region that receives the electric charges generated by the second photoelectric conversion region, wherein the second region includes second impurities;
and
a second gate electrode that discharges the electric charges generated by the second photoelectric conversion region to the second region, and
a first impurity concentration near the first gate electrode and a second impurity concentration near the second gate electrode are different from each other.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/261,154Filed 29 Jan 2019
Priority: JP 2015-05941923 Mar 2015
Published: 6 Jun 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification14 codes

H04N 25/76
SSIS architectures; Circuits associated therewith: addressed sensors, e.g. MOS or CMOS sensors
H04N 23/12
For generating image signals from different wavelengths: with one sensor only
H04N 25/133
Characterised by the spectral characteristics of the filter elements: including elements passing panchromatic light, e.g. filters passing white light
H04N 25/135
Characterised by the spectral characteristics of the filter elements: based on four or more different wavelength filter elements

Family

Application15/554,739Continuation · filed 31 Aug 2017
Application16/261,154Continuation
US 10,431,622 B2Related patent
US 10,784,304 B2Related patent
US 2018/0240840 A1Published application
US 2019/0172869 A1This patent

From the US filing history. Foreign family members aren’t listed.

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