Methods of forming redistribution lines and methods of manufacturing semiconductor devices using the same

A method of manufacturing a semiconductor device, the method comprising:

• providing a base structure including semiconductor substrate having an active surface and an inactive surface opposite to the active surface, and a color filter and a micro-lens on the active surface;
• forming a redistribution metal layer on the inactive surface of the semiconductor substrate;
• forming on the inactive surface of the semiconductor substrate an organic insulation layer covering the redistribution metal layer;
• and
• growing a metal oxide layer to a predetermined thickness between the redistribution metal layer and the organic insulation layer,
• wherein the metal oxide layer is grown to said predetermined thickness during processing carried out subsequent to the forming of the organic insulation layer within a temperature regime specified to avoid thermal damage to the color filter and the micro-lens.

A method of forming a redistribution line, the method comprising:

• providing a base structure including a semiconductor substrate having an active surface and an inactive surface, and a through electrode that does not reach the inactive surface;
• recessing the inactive surface of the semiconductor substrate to expose the through electrode;
• subsequently forming the redistribution line on the inactive surface of the semiconductor substrate, the redistribution line electrically connected to the through electrode;
• and
• forming an organic passivation layer covering the redistribution line;
• and
• growing, at a temperature equal to or less than 250° C., a native metal oxide layer between the redistribution line and the organic passivation layer to a thickness in a range of from 50 nm to 200 nm.