Array substrate and manufacturing method therefor, display panel and display apparatus
AssigneeBoe Technology Group Co., Ltd.
InventorXueyan TIAN
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Abstract
Disclosed are an array substrate and a manufacturing method therefor, a display panel and a display apparatus. The array substrate comprises several pixel units located on a base substrate and arranged in an array, with each of the pixel units comprising a thin-film transistor, and the thin-film transistor comprising a polycrystalline silicon active layer, wherein a length extension direction of a channel of the thin-film transistor is parallel to a pre-set direction; and the pre-set direction is a scanning direction of an excimer laser beam used when forming the polycrystalline silicon active layer.
Claims13
An array substrate, comprising a plurality of pixel units which are on a substrate and arranged in an arrayed manner, each of the pixel units comprising a thin film transistor, the thin film transistor comprising a poly-silicon active layer, wherein a length extension direction of a channel of the thin film transistor is parallel to a preset direction;
- the preset direction is a scanning direction of an excimer laser beam utilized when the poly-silicon active layer is formed.
A manufacturing method of an array substrate, comprising manufacturing a thin film transistor on a substrate, wherein
- the manufacturing the thin film transistor comprises manufacturing a poly-silicon active layer, the manufacturing a poly-silicon active layer comprises:
- forming an amorphous silicon layer on the substrate, and forming a first amorphous silicon layer and a second amorphous silicon layer by utilizing a patterning process, wherein a position of the first amorphous silicon layer corresponds to a position of a channel of the thin film transistor;
- and
- performing annealing treatment on the first amorphous silicon layer and the second amorphous silicon layer by utilizing an excimer laser beam simultaneously to obtain a first poly-silicon active layer and a second poly-silicon active layer, wherein an extension direction of the first amorphous silicon layer in a preset direction is parallel to a scanning direction of the excimer laser beam.
Dependencies are inferred from the claim text.