Storage device

A storage device, comprising:

• a conductive layer;
• a plurality of electrode layers stacked on the conductive layer;
• a wiring above the plurality of electrode layers;
• an interlayer insulating film between the plurality of electrode layers and the wiring;
• a semiconductor film in a memory region extending in a stacking direction of the plurality of electrode layers;
• a contact plug extending in the stacking direction, and connected to each of the plurality of electrode layers;
• and
• a conductive film in a contact region and penetrating at least one of the plurality of electrode layers in the stacking direction,
• wherein the semiconductor film is electrically connected to the conductive layer and the wiring, and
• an entire upper end of the conductive film is covered by an insulating layer.

A method of manufacturing a semiconductor memory device, comprising:

• forming a plurality of interlayer insulating films in a stacked direction on a source layer on a silicon substrate;
• forming a plurality of holes in the stacked direction through the interlayer insulating films and extending to the source layer;
• filling holes in a lead out region with insulating film and metal film to form support holes;
• filling holes in a memory region with memory film, semiconductor film and insulating core to form memory holes;
• forming slits that extend down to the source layer and creating metal films in a stacked direction to form wiring between the interlayer insulating films to the memory holes;
• and
• covering the upper end of the metal film in the support holes with an insulating layer.