Semiconductor device for testing characteristics of transistors and method for testing semiconductor device

A semiconductor device, comprising:

• a substrate;
• an active area defined on the substrate;
• an insulated gate configured to be formed on the active area;
• a first source layer and a first drain layer configured to be formed on the active area in a first two-way direction of the gate;
• and
• a second source layer and a second drain layer configured to be formed on the active area in a second two-way direction of the gate,
• wherein each of the first source layer, the first drain layer, and the second drain layer is formed as a first conductive type, and
• wherein the second source layer is formed as a second conductive type.

A method for testing a semiconductor device, the method comprising:

• verifying whether the semiconductor device is driven;
• applying stimulation for forming stress on a surface between at least one of a first source layer, a first drain layer, a second source layer, and a second drain layer and a gate insulating layer to the semiconductor device;
• and
• evaluating performance of a tunneling field effect transistor (TFET), after the stress is formed on the surface.

A semiconductor test pattern, comprising:

• a substrate;
• an active area of a cross form, the active area being defined on the substrate;
• a gate configured to be located on a central portion of the active area;
• a gate insulating film configured to be located between the gate and the central portion of the active area;
• and
• four impurity regions formed on the active area outside the gate,
• wherein any one of the four impurity regions is formed as a first conductive type, and
• wherein each of the other impurity regions is formed as a second conductive type.