Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDaeho YOON, Daeseon Jeon, Jaeyoung Choi
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Abstract
Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises providing a layout comprising a first group that includes first and second patterns and a second group that includes third and fourth patterns, examining a bridge risk region in the layout, biasing one end of at least one of the first and third patterns, and forming first to fourth conductive patterns by respectively using the first to fourth patterns of the layout. The one end of at least one of the first and third patterns are adjacent to the bridge risk region.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- providing a layout comprising a first group and a second group, the first group including a first pattern and a second pattern, the second group including a third pattern and a fourth pattern;
- examining a bridge risk region in the layout;
- biasing one end of at least one of the first and third patterns;
- and
- forming first to fourth conductive patterns by using the first to fourth patterns of the layout, respectively,
- wherein the one end of at least one of the first and third patterns is adjacent to the bridge risk region.
A method of manufacturing a semiconductor device, the method comprising:
- providing a layout;
- performing a line-end biasing on the layout;
- and
- using the layout to form conductive patterns on a substrate,
- wherein performing the line-end biasing comprises:
- examining a bridge risk region in the layout;
- biasing one end of at least one of patterns in the layout, the one end being adjacent to the bridge risk region;
- and
- performing a design rule check.
A semiconductor device, comprising:
- a substrate;
- and
- first, second, third, and fourth conductive patterns on the substrate, the first to fourth conductive patterns extending in parallel to each other in a first direction and being sequentially arranged in a second direction crossing the first direction,
- wherein the third conductive pattern comprises on its one side a first extension protruding toward the first conductive pattern, and
- wherein the second conductive pattern comprises on its one side a second extension protruding toward the fourth conductive pattern,
- wherein the first extension and the second extension are spaced apart from each other in the first direction,
- wherein the first extension is aligned in the second direction with one end of the first conductive pattern, and
- wherein the second extension is aligned in the second direction with one end of the fourth conductive pattern.
Dependencies are inferred from the claim text.