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US 2019/0172818 A1Published application
Method of forming package structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Cheng LIN, Po-Hao TSAI
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Abstract
A method includes forming an under bump metallization (UBM) layer over a dielectric layer, forming a redistribution structure over the UBM layer, disposing a semiconductor device over the redistribution structure, removing a portion of the dielectric layer to form an opening to expose the UBM layer, and forming a conductive bump in the opening such that the conductive bump is coupled to the UBM layer.
Claims20
A method, comprising:
- forming an under bump metallization (UBM) layer over a dielectric layer;
- forming a redistribution structure over the UBM layer;
- disposing a semiconductor device over the redistribution structure;
- removing a portion of the dielectric layer to form an opening to expose the UBM layer;
- and
- forming a conductive bump in the opening such that the conductive bump is coupled to the UBM layer.
3 more elements
A method, comprising:
- forming a second dielectric layer over a first dielectric layer;
- patterning the second dielectric layer to form a protrusion over the first dielectric layer;
- forming a under bump metallization (UBM) layer conformally over the protrusion;
- disposing a semiconductor device over the UBM layer;
- and
- removing a portion of the first dielectric layer and the protrusion to expose the UBM layer.
3 more elements
A method, comprising:
- forming a redistribution structure over a carrier;
- performing a first electrical test on the redistribution structure;
- disposing a semiconductor device over the redistribution structure after performing the first electrical test;
- and
- molding the semiconductor device with a molding compound.
2 more elements
Dependencies are inferred from the claim text.