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US 2019/0172812 A1Published application
Power semiconductor device and method for manufacturing same
AssigneeMitsubishi Electric Corporation
InventorsHiroaki OKABE, Yosuke NAKANISHI
Life of this patent
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Abstract
An electrode is disposed on a semiconductor layer. A polyimide layer has an opening disposed on the electrode, covers the edge of the electrode, and extends onto the electrode. A copper layer is disposed on the electrode within the opening, and located away from the polyimide layer on the electrode. A copper wire has one end joined on the copper layer.
Claims12
1:
- A power semiconductor device comprising:
- a semiconductor layer;
- an electrode disposed on the semiconductor layer;
- a polyimide layer comprising an opening disposed on the electrode, the polyimide layer covering an edge of the electrode and extending onto the electrode;
- a copper layer disposed on the electrode within the opening, and located away from the polyimide layer on the electrode;
- and
- a copper wire comprising one end joined on the copper layer,
- wherein the copper layer has a larger area than a region in which the copper wire is joined to the copper layer, and
- a distance between the copper layer and the polyimide layer is greater than half a thickness of the copper layer.
6 more elements
2-3. (canceled)
4:
- The power semiconductor device according to claim 1, further comprising a silicon nitride layer separating the polyimide layer from the copper layer.
5:
- The power semiconductor device according to claim 1, wherein the copper wire has a diameter of 100 μm or more.
6:
- The power semiconductor device according to claim 1, further comprising a sealant sealing a gap between the polyimide layer and the copper layer,
- wherein the sealant is made of any of a silicone-based material, an epoxy-based material, and a phenol-based material.
7:
- The power semiconductor device according to claim 1, wherein at least part of the semiconductor layer is made of silicon carbide.
8:
- A method for manufacturing a power semiconductor device, comprising the steps of:
- forming an electrode on a semiconductor layer;
- forming a polyimide layer comprising an opening disposed on the electrode, the polyimide layer covering an edge of the electrode and extending onto the electrode;
- forming, on the electrode within the opening, a copper layer located away from the polyimide layer on the electrode;
- and
- joining one end of a copper wire having a diameter of 100 μm or more onto the copper layer,
- wherein the step of joining the one end of the copper wire is performed to the copper layer located away from the polyimide layer by a distance greater than half a thickness of the copper layer.
4 more elements
9:
- A power semiconductor device comprising:
- a semiconductor layer;
- an electrode disposed on the semiconductor layer;
- a polyimide layer comprising an opening disposed on the electrode, the polyimide layer covering an edge of the electrode and extending onto the electrode;
- a copper layer disposed on the electrode within the opening, and located away from the polyimide layer on the electrode;
- a copper wire comprising one end joined on the copper layer;
- and
- a silicon nitride layer partly disposed on the electrode,
- wherein the copper layer comprises an edge on the silicon nitride layer.
6 more elements
10:
- The power semiconductor device according to claim 9, wherein the silicon nitride layer separates the polyimide layer from the copper layer.
11:
- The power semiconductor device according to claim 9, wherein the copper wire has a diameter of 100 μm or more.
12:
- The power semiconductor device according to claim 9, further comprising a sealant sealing a gap between the polyimide layer and the copper layer,
- wherein the sealant is made of any of a silicone-based material, an epoxy-based material, and a phenol-based material.
13:
- The power semiconductor device according to claim 9, wherein at least part of the semiconductor layer is made of silicon carbide.