US 2019/0172794 A1 · SEMICONDUCTOR DEVICE

Abstract

According to one embodiment, a semiconductor device includes a substrate, a stacked body, a plurality of columnar portions, a separation portion, and a wall portion. The separation portion extends through the stacked body in a first direction and separates the stacked body into a plurality of blocks in a second direction. The separation portion includes a conductive material contacting the substrate. The wall portion is disposed between the separation portion and a columnar portion of the plurality of columnar portions most proximal to the separation portion. The wall portion pierces a lowermost electrode layer of the plurality of electrode layers and pierces an interface between the substrate and the stacked body.

Claims20

Dependent claims

A semiconductor device, comprising:

a substrate;
a stacked body provided above the substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed;
a plurality of columnar portions extending through the stacked body in a stacking direction of the stacked body;
a separation portion extending through the stacked body in a first direction and separating the stacked body into a plurality of blocks in a second direction, the second direction crossing the first direction, the separation portion including a conductive material contacting the substrate;
a wall portion disposed between the separation portion and a columnar portion of the plurality of columnar portions most proximal to the separation portion, the wall portion piercing a lowermost electrode layer of the plurality of electrode layers and piercing an interface between the substrate and the stacked body.

2 more elements

A method for manufacturing a semiconductor device, comprising:

forming a stacked body above a substrate, the stacked body including a plurality of first layers and a plurality of second layers, the first layers and the second layers including a first layer and a second layer stacked alternately;
forming a wall portion piercing a lowermost first layer of the plurality of first layers and piercing an interface between the substrate and the stacked body;
forming a plurality of columnar portions inside a plurality of holes, the holes piercing the stacked body and reaching the substrate;
and
forming a conductive material contacting the substrate inside a first slit, the first slit extending through the stacked body in a first direction and separating the stacked body into a plurality of blocks in a second direction crossing the first direction,
the wall portion being located between the conductive material and a columnar portion of the plurality of columnar portions most proximal to the conductive material.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20