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US 2019/0172783 A1Published application
Capacitance reduction in sea of lines beol metallization
AssigneeInternational Business Machines Corporation
InventorsBenjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo, Hosadurga Shobha
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Abstract
A semiconductor interconnect structure and a method of fabricating the same are provided. The semiconductor interconnect structure includes a sea of interconnect lines including metal lines and neighboring dummy lines. The semiconductor interconnect structure further includes a dielectric layer arranged between the sea of lines.
Claims12
A semiconductor interconnect structure, comprising:
- a sea of interconnect lines including metal lines and neighboring dummy lines;
- and
- a dielectric layer arranged between the sea of lines,
- wherein the metal lines and the dummy lines are arranged in an array, and wherein the metal lines have a same height and a same width as the dummy lines, and wherein each of the metal lines is disposed in an alternating manner with respect to each of the dummy lines.
1 more element
9-10. (canceled)
12-20. (canceled)
Dependencies are inferred from the claim text.