Semiconductor apparatus

A semiconductor apparatus comprising:

• a substrate;
• a plurality of unit transistors provided on the substrate, each of the plurality of unit transistors including an operating region through which an operating current flows;
• a wiring disposed above the operating regions of the plurality of unit transistors to serve as a path for the operating current to flow through the plurality of unit transistors;
• an insulating film disposed on the wiring and including at least one cavity, an entirety of the at least one cavity overlapping with the wiring as viewed from above;
• and
• a metal member disposed on the insulating film and electrically connected to the wiring via the at least one cavity, wherein
• the plurality of unit transistors are disposed on the substrate side by side in a first direction,
• a centroid of the at least one cavity is displaced from a centroid of the operating region of each of the plurality of unit transistors in the first direction, as viewed from above, and
• for each of the unit transistors, when, among the at least one cavity, a cavity having a centroid positioned most closely to the centroid of the operating region of a given unit transistor is defined as a closest proximity cavity for the given unit transistor, an amount of deviation of the centroid of the closest proximity cavity in the first direction from the centroid of the operating region of the unit transistor positioned at one end in the first direction is smaller than an amount of deviation of the centroid of the closest proximity cavity in the first direction from the centroid of the operating region of the unit transistor positioned at the other end in the first direction.

A semiconductor apparatus comprising:

• a substrate;
• a plurality of unit transistors provided on the substrate, each of the plurality of unit transistors including at least one operating region through which an operating current flows;
• a wiring disposed above the operating regions of the plurality of unit transistors to serve as a path for the operating current to flow through the plurality of unit transistors;
• an insulating film disposed on the wiring and including at least one cavity, an entirety of the at least one cavity overlapping with the wiring as viewed from above;
• and
• a metal member disposed on the insulating film and electrically connected to the wiring via the at least one cavity, wherein
• the plurality of unit transistors are disposed on the substrate side by side in a first direction,
• as viewed from above, when the smallest rectangle containing the at least one operating region of each of the plurality of unit transistors therein is defined as an effective operating region, and, assuming that a line parallel with a second direction perpendicular to the first direction and passing through a midpoint of a segment between a centroid of a given effective operating region and a centroid of an adjacent effective operating region is set as an imaginary line, when each of a plurality of regions sandwiched between the imaginary lines is defined as a range influenced by the effective operating region positioned within the range, an area of an overlapping region where the range and the cavity overlap with each other differs among the effective operating regions, and
• areas of the overlapping regions corresponding to the effective operating regions positioned at both ends in the first direction are smaller than areas of the overlapping regions corresponding to the effective operating regions other than the effective operating regions positioned at both ends in the first direction.