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US 2019/0172772 A1Published application
Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold
AssigneeRohm Co., Ltd.
InventorToshio HANADA
Life of this patent
Estimating the term…
Abstract
The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.
Claims27
1-20. (canceled)
A semiconductor device comprising:
- an insulating substrate;
- a first transistor element disposed on or over the insulating substrate;
- a second transistor element disposed on or over the insulating substrate;
- a first upper surface plate electrode electrically connected to the first transistor element and the second transistor element;
- a control signal electrode pattern disposed on the insulating substrate;
- a first wire connected between a control electrode of the first transistor element and the control signal electrode pattern;
- a second wire connected between a control electrode of the second transistor element and the control signal electrode pattern;
- a first pillar electrode formed to connect between the first transistor element and the first upper surface plate electrode;
- a second pillar electrode formed to connect between the second transistor element and the first upper surface plate electrode;
- and
- a resin layer formed to cover the first transistor element, the second transistor element, and the insulating substrate.
8 more elements
Dependencies are inferred from the claim text.