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US 2019/0172771 A1Published application
LDMOS Transistor
AssigneeInfineon Technologies AG
InventorsAlbert Birner, Helmut Brech, Matthias Zigldrum
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Abstract
In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a lateral transistor arranged in the front surface of the semiconductor substrate and having an intrinsic source, and a through substrate via. A first conductive layer lines side walls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source of the lateral transistor.
Claims18
A semiconductor device, comprising:
- a semiconductor substrate comprising a front surface;
- a lateral transistor arranged in the front surface of the semiconductor substrate and having an intrinsic source;
- and
- a through substrate via,
- wherein a first conductive layer lines side walls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source of the lateral transistor.
2 more elements
Dependencies are inferred from the claim text.