US 2019/0172770 A1 · Semiconductor Device with Integrated pn Diode Temperature Sensor

Abstract

A semiconductor device includes a semiconductor substrate having a first region with one or more transistor cells and a second region devoid of transistor cells, a first dielectric material over the first region and the second region of the semiconductor substrate, a second dielectric material over the first dielectric material, a pn diode formed in the first dielectric material over the second region of the semiconductor substrate, a plurality of first contacts extending from above the pn diode and into a p-type region of the pn diode so that the p-type region abuts sidewalls of each first contact, and a plurality of second contacts extending from above the pn diode and into an n-type region of the pn diode so that the n-type region abuts sidewalls of each second contact.

Claims22

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate having a first region with one or more transistor cells and a second region devoid of transistor cells;
a first dielectric material over the first region and the second region of the semiconductor substrate;
a second dielectric material over the first dielectric material;
a pn diode formed in the first dielectric material over the second region of the semiconductor substrate;
a plurality of first contacts electrically connected to an anode electrode of the pn diode and extending from above the pn diode and into a p-type region of the pn diode so that the p-type region abuts sidewalls of each first contact;
and
a plurality of second contacts electrically connected to a cathode electrode of the pn diode and extending from above the pn diode and into an n-type region of the pn diode so that the n-type region abuts sidewalls of each second contact.

4 more elements

A method of manufacturing a semiconductor device, the method comprising:

forming one or more transistor cells in a first region of a semiconductor substrate, the semiconductor substrate having a second region that is devoid of transistor cells;
forming a first dielectric material over the first region and the second region of the semiconductor substrate;
forming a second dielectric material over the first dielectric material;
forming a pn diode in the first dielectric material over the second region of the semiconductor substrate;
forming a plurality of first contacts that extend from above the pn diode and into a p-type region of the pn diode so that the p-type region abuts sidewalls of each first contact;
and
forming a plurality of second contacts that extend from above the pn diode and into an n-type region of the pn diode so that the n-type region abuts sidewalls of each second contact.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor Device with Integrated pn Diode Temperature Sensor

Life of this patent

Semiconductor Device with Integrated pn Diode Temperature Sensor

Life of this patent

Abstract

Claims22