Method of detecting a possible thinning of a substrate of an integrated circuit via the rear face thereof, and associated device

An integrated circuit, comprising:

• a semiconductor substrate produced above a buried semiconductor layer and including a supply terminal configured to receive a supply voltage and a reference terminal configured to receive a reference voltage;
• the semiconductor substrate supporting at least one device configured to detect a possible thinning of the semiconductor substrate via the rear face thereof, said at least one device comprising:
• a non-inverting buffer including a first MOS transistor and a second MOS transistor that are complementary and coupled in series between the supply terminal and the reference terminal, an input terminal and an output terminal that is an electrode common to both the first and second MOS transistors, the buried semiconductor layer including the supply terminal;
• a control circuit configured to generate an input signal in a first state;
• wherein the non-inverting buffer operates, in the presence of the input signal in the first state and in the absence of thinning of the substrate, in a first configuration in which the first transistor is configured to deliver a signal having the first state on the output terminal and in which the second transistor is switched off;
• and
• wherein the control circuit is configured to generate a control signal indicating that thinning of the substrate has occurred if the signal on the output terminal is in a different state than the first state.