Method for incorporating multiple channel materials in a complimentary field effective transistor (cfet) device

A method of manufacturing a semiconductor device comprising:

• providing a substrate having a base fin structure thereon, the base fin structure comprising:
• a first stacked portion for forming a channel of a first gate-all-around (GAA) transistor, the first stacked portion comprising first channel material,
• a second stacked portion for forming a channel of a second GAA transistor, the second stacked portion comprising second channel material, and
• a sacrificial portion separating the first stack portion from the second stack portion provided between upper and lower portions of second sacrificial material such that the first channel material, second channel material and sacrificial material are exposed at a side of the base fin structure, wherein the first channel material, the second channel material and the sacrificial material have different chemical compositions from each other;
• exposing the side of the base fin structure to an isotropic etch process which selectively etches one of the first channel material, the second channel material and the sacrificial material relative to the other two of the first channel material, the second channel material and the sacrificial material;
• and
• forming first and second GAA gate structures around said first channel material and said second channel material respectively.