Method for controlling transistor delay of nanowire or nanosheet transistor devices

A semiconductor device comprising:

• a substrate having a planar surface;
• a first gate-all-around field effect transistor (GAA-FET) provided on said substrate and comprising a first channel having an untrimmed volume of first channel material corresponding to a volume of the first channel material within a first stacked fin structure from which the first channel was formed;
• and
• a second GAA-FET provided on said substrate and comprising a second channel having a trimmed volume of second channel material which is less than said untrimmed volume of first channel material by a predetermined trim amount corresponding to a delay adjustment of the second GAA-FET relative to the first GAA-FET, wherein said first and second GAA FETs are electrically connected as complementary FETs.

A method of manufacturing a semiconductor device comprising:

• providing a substrate comprising:
• a first stacked fin structure for forming a channel of a first gate-all-around (GAA) transistor, the first stacked fin structure comprising an initial volume of first channel material provided between upper and lower portions of first sacrificial material such that the first channel material and first sacrificial material are exposed at a side of the first stacked fin structure, and
• a second stacked fin structure for forming a channel of a second GAA transistor, the second stacked fin structure comprising an initial volume of second channel material provided between upper and lower portions of second sacrificial material such that the second channel material and second sacrificial material are exposed at a side of the second stacked fin structure;
• reducing said initial volume of the second channel material relative to the initial volume of first channel material by a predetermined amount corresponding to a threshold voltage of the first GAA transistor;
• and
• forming first and second GAA gate structures around said first channel material and said second channel material respectively.