Method and apparatus for wafer outgassing control
AssigneeApplied Materials, Inc.
InventorsXinyu BAO, Chun YAN, Hua CHUNG, Schubert S. CHU
Life of this patent
Estimating the term…
Loading patent…
AssigneeApplied Materials, Inc.
InventorsXinyu BAO, Chun YAN, Hua CHUNG, Schubert S. CHU
Estimating the term…
Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a gas supply coupled to the enclosure, an exhaust pump coupled to the enclosure, a first purge gas port formed in the enclosure, a first channel operatively connected to the gas supply at a first end and to the first purge gas port at a second end, a second purge gas port formed in the enclosure, and a second channel operatively connected to the second purge gas port at a third end and to the exhaust pump at a fourth end. The first channel includes a particle filter, a heater, and a flow controller. The second channel includes a dry scrubber.
A semiconductor processing system, comprising:
A semiconductor processing system, comprising:
A semiconductor processing method, comprising:
(canceled)
Dependencies are inferred from the claim text.