Apparatus and methods for creating a thermal interface bond between a semiconductor die and a passive heat exchanger

A semiconductor device assembly, comprising:

• a semiconductor device;
• a heat exchanger;
• a bond enhancing agent disposed on a first surface of the semiconductor device;
• a thermal interface disposed on the first surface of the semiconductor device and contacting a facing surface of the heat exchanger, wherein the thermal interface comprises an indium metal.

A semiconductor device assembly, comprising:

• a semiconductor device:
• a heat exchanger;
• a bond enhancing agent disposed on a first surface of the semiconductor device;
• a thermal interface disposed on the first surface of the semiconductor device and contacting a facing surface of the heat exchanger, wherein the bond enhancing agent comprises at least one of a an organotitanate, and an organozirconate.

A semiconductor device assembly, comprising:

• a semiconductor device:
• a heat exchanger;
• a bond enhancing agent disposed on a first surface of the semiconductor device;
• a thermal interface disposed on the first surface of the semiconductor device and contacting a facing surface of the heat exchanger, wherein the bond enhancing agent comprises an oxide or sub-oxide seed layer deposited by applying a bulk liquid metal to the semiconductor device and removing the bulk liquid metal to leave the oxide seed layer.

A semiconductor device assembly, comprising:

• a semiconductor device;
• a heat exchanger;
• a bond enhancing agent disposed on a first surface of the semiconductor device;
• a thermal interface disposed on the first surface of the semiconductor device and contacting a facing surface of the heat exchanger, wherein the thermal interface comprises alloys that react with the bond enhancing agent.