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US 2019/0172723 A1Published application
Methods For Gapfill In High Aspect Ratio Structures
AssigneeApplied Materials, Inc.
InventorsRui Cheng, Abhijit Basu Mallick, Pramit Manna, Yihong Chen
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Abstract
Methods for seam-less gapfill comprising depositing a film in a feature, treating the film to change some film property and selectively etching the film from the top surface are described. The deposition, treatment and etching are repeated to form a seam-less gapfill in the feature.
Claims20
A processing method comprising:
- providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- forming a film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the film having a thickness at a top of the feature and a thickness at the bottom of the feature;
- treating the film to change one or more of structure, composition or morphology of the film to form a treated film;
- and
- etching the treated film to remove substantially all of the treated film from the top of the feature and leaving at least some of the treated film at the bottom of the feature.
2 more elements
A processing method comprising:
- providing a substrate surface having a feature thereon, the feature having sidewalls and a bottom;
- depositing a silicon film in the feature and on the substrate surface;
- exposing the silicon film to a treatment to modify a structure, composition or morphology of the silicon film, the treatment comprising exposure to one or more of Ar, He or H2;
- etching the film from the substrate surface using one or more of H2, HCl or Cl2 to remove substantially all of the film from the substrate surface and leaving at least some of the film in the feature;
- and
- repeating the deposition, treatment and etching to fill the feature.
3 more elements
A processing method comprising:
- providing a substrate surface having a feature thereon, the feature having sidewalls and a bottom;
- forming one or more of SiN, SiO or SiON on the substrate surface so that there is substantially no SiN, SiO or SiON at the bottom of the feature;
- depositing a substantially amorphous silicon film in the feature and on the substrate surface, the substantially amorphous silicon film having a thickness in the range of about 1 to about 50 nm;
- exposing the silicon film to a treatment to crystallize greater than or equal to about 50% of the amorphous silicon film, the treatment comprising exposure to one or more of Ar, He or H2;
- etching the film from the substrate surface using one or more of H2, HCl or Cl2 to remove substantially all of the film from the substrate surface and leaving at least some of the film in the feature;
- and
- repeating the deposition, treatment and etching to fill the feature.
4 more elements
Dependencies are inferred from the claim text.