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AssigneeApplied Materials, Inc.
InventorsHouda Graoui, Johanes S. Swenberg, Wei Liu, Shashank Sharma
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Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process, or a single-step plasma hydrogenation and nitridization process, is performed on a metal nitride layer in a film stack, thereby, according to some embodiments, removing oxygen atoms disposed within layers of the film stack and, in some embodiments, adding nitrogen atoms to the layers of the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift.
A method of forming a structure in a semiconductor device, the method comprising:
A method of forming a structure in a semiconductor device, the method comprising:
A method of forming a structure in a semiconductor device, the method comprising:
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