Manufacturing method of a semiconductor device with efficient edge structure

A method, comprising:

• forming a mask on a top surface of a semiconductor body, the mask including a first opening defined by first side walls having a first slope and a second opening defined by second sidewalls with one of the second side walls being a ramp having a second slope that is less than the first slope;
• forming a trench in the semiconductor body by etching the semiconductor body through the first opening;
• and
• forming a depression region in the semiconductor body by etching the semiconductor body through the second opening, etching at least a portion of the ramp, and etching a portion of the semiconductor body that was exposed by etching the at least a portion of the ramp, wherein forming the depression region and forming the trench are carried concurrently.

A method of making a Junction-Barrier Schottky (JBS) diode, comprising:

• forming a trench in a semiconductor body having top and bottom surfaces and a first conductivity, forming the trench including etching the semiconductor body starting from the top surface, the trench being defined by side walls of the semiconductor body that have a first slope;
• forming an edge-termination structure laterally to said trench by implanting dopant species which have a second conductivity different from the first conductivity;
• forming a depression region between said trench and said edge-termination structure by etching the drift layer starting from the top surface concurrently with forming the trench, the depression region comprises patterning the drift layer to have a second slope that is less than the first slope;
• implanting dopant species, which have the second conductivity, in the semiconductor body at a bottom of the trench to form one or more first surface regions of the second conductivity between plural second surface regions of the semiconductor body, which have the first type of conductivity;
• forming an anode contact at the top surface of the semiconductor body, the anode contact contacting the first and second surface regions;
• and
• forming a cathode contact at the bottom surface of the semiconductor body.