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US 2019/0172707 A1Published application
Method for manufacturing a semiconductor device and film deposition apparatus
AssigneeTokyo Electron Limited
InventorsTakahito UMEHARA, Masato KOAKUTSU
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Abstract
A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities.
Claims20
A method for manufacturing a semiconductor device, comprising steps of:
- removing impurities contained in a first layer formed on a substrate by heating the first layer;
- and
- forming on the first layer a second layer containing a component that forms a substance that is able to vaporize by reacting with the impurities.
A film deposition apparatus, comprising:
- a process chamber;
- a rotatable susceptor provided in the process chamber and configured to receive a substrate along a circumferential direction thereof;
- a source gas supply region configured to supply a source gas to the substrate and provided above the turntable and along a rotational direction of the turntable;
- a reducing/oxidizing region configured to supply hydrogen gas and/or oxygen gas to the substrate and provided above the substrate and downstream of and apart from the source gas supply region in the rotational direction of the susceptor;
- a heater configured to heat the susceptor;
- and
- a controller configured to cause the heater to heat the susceptor after a substrate having a first layer that contains impurities is placed on the susceptor such that the impurities contained in the first layer are removed.
4 more elements
Dependencies are inferred from the claim text.