US 2019/0172704 A1 · ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICES

Abstract

A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.

Claims20

Dependent claims

A method for depositing a silicon and hydrogen containing layer comprising:

introducing a substrate into a process chamber of a deposition tool;
heating the substrate to a process temperature;
introducing precursors that include at least one dielectric providing gas species for a deposited layer comprising silicon and at least one hydrogen precursor gas into the process chamber of the deposition tool, wherein the hydrogen precursor gas is introduced to the process chamber at a flow rate to provide a molar ration of hydrogen to silicon that is greater than 0.05;
and
activating a plasma in the process chamber.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/250,188Filed 17 Jan 2019

Priority

11 Mar 2016

Published

6 Jun 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10P 14/6905
Containing silicon: being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
C23C 16/36
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides: carbonitrides
C23C 16/455
Characterised by the method of coating: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in…
C23C 16/50
Characterised by the method of coating: using electric discharges

Family

Application15/067,996Continuation · filed 11 Mar 2016

Application15/468,818Division · filed 24 Mar 2017

Application16/250,188Division

Application15/468,818Continuation

US 10,242,865 B2Related patent

US 2017/0263451 A1Published application

US 9,735,005 B1Related patent

US 2019/0172704 A1This patent

From the US filing history. Foreign family members aren’t listed.

ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICES

Life of this patent

ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICES

Life of this patent

Abstract

Claims20