US 2019/0172700 A1 · FILM DEPOSITION METHOD OF DEPOSITING FILM AND FILM DEPOSITION APPARATUS

Abstract

A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.

Claims14

Dependent claims

A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses, which are formed on the flat surface, the film deposition method comprising:

a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate;
a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site;
and
a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.

1 more element

A film deposition apparatus comprising:

a treatment chamber;
a turntable that is disposed inside the treatment chamber and includes a substrate mounting area, which is formed on a front surface of the turntable and on which a substrate can be mounted;
a chlorine containing gas supplying area that is formed on a predetermined area of the turntable so as to be capable of supplying the chlorine containing gas that is activated along a rotational direction of the turntable;
a nitriding gas supplying area that is formed on a downstream side in the rotational direction of the chlorine containing gas supplying area of the turntable so as to be capable of supplying a nitriding gas activated to the substrate;
a raw gas supplying area that is formed on a downstream side in the rotational direction of the nitriding gas supplying area of the turntable so as to be capable of supplying a raw gas containing silicon and chlorine;
and
a control unit configured to controlling to perform:
a chlorine radical adsorbing step as an initial stage of a film deposition process of
stopping the supplying of the nitriding gas into the nitriding gas supplying area and the supplying of the raw gas into the raw gas supplying area, and
supplying a chlorine containing gas that is activated onto the substrate while rotating the turntable
repeated multiple cycles, each of which is formed by another chlorine radical adsorbing step, a nitriding step, and a raw gas adsorbing step, by supplying the chlorine containing gas that is activated in the chlorine containing gas supplying area onto the substrate, supplying the nitriding gas that is activated in the nitriding gas supplying area onto the substrate, and supplying the raw gas onto the substrate while rotating the turntable.

8 more elements

Dependencies are inferred from the claim text.

Film deposition method of depositing film and film deposition apparatus

Life of this patent

Film deposition method of depositing film and film deposition apparatus

Life of this patent

Abstract

Claims14