Polarization-based configurable logic gate

A polarization-based configurable logic gate comprising:

• a transistor having gate, source, drain and body contacts, and including a polarizable material layer having a polarization state settable to any polarization state from among at least two polarization states, the polarization state to which the polarizable material is set representing a first logic value;
• a resistive element having a first terminal coupled to the drain and a second terminal;
• and
• a plurality of input/output terminals connected to the transistor contacts and to the second terminal of the resistive element, interconnections between the plurality of input/output terminals being configurable into different interconnection configurations, each interconnection configuration having corresponding logic operations and configured to apply an operational voltage to the second terminal of the resistive element and a sensing voltage representing a second logic value across the polarizable material layer with a resulting current flow through the resistive element representing results of the corresponding logic operations between the first logic value and the second logic value.

A configurable logic cell comprising:

• a FeFET including a gate, a source, a drain, and a bulk terminal;
• a resistor having a first terminal connected to the drain and a second terminal;
• a first input/output terminal connected to the gate;
• a second input/output terminal connected to the second terminal of the resistor
• a third input/output terminal connected to the source;
• a fourth input/output terminal connected to the drain;
• and
• a fifth input/output terminal connected to the bulk terminal.

A method of performing a logic operation including:

• providing a configurable logic gate including:
• a transistor having a drain and including a polarizable material layer having a polarization state settable to any polarization state from among at least two polarization states, the polarization state to which is the polarizable is set representing a first logic value;
• a resistive element having a first terminal coupled to the drain and a second terminal;
• providing a programming voltage across the polarizable material layer to program the polarizable material layer to a desired polarization state;
• providing a sensing voltage representing a second logic value to
• a plurality of input/output terminals connected to the transistor and second terminal of the resistive element so as to apply voltages to selected input/output terminals, including a sensing voltage representing a second logic value, with a resulting drain current of the transistor at least partially flowing through the resistive element and representing a logic operation between the first and second logic values, where the logic operation depends on an interconnection configuration between terminals of the transistor and the second terminal of the resistive element.