Resistive memory apparatus and operating method thereof

An operating method of a resistive memory apparatus, wherein the resistive memory apparatus comprises M memory cells, and the operating method comprises:

• a first step for performing a voltage applying operation on an Nth memory cell of the M memory cells via a first signal transmission path, wherein the first signal transmission path passes the Nth memory cell, and N<M where M and N are positive integers;
• a second step for performing the voltage applying operation on a Kth memory cell of the M memory cells via a second signal transmission path, wherein the second signal transmission path passes the Kth memory cell, and K≤M where K is a positive integer;
• and
• a third step for repeatedly performing the first step and the second step until the voltage applying operation is completed for all of the M memory cells,
• wherein M, N and K satisfy a relational expression of N+K=M+1, an IR drop of the first signal transmission path is substantially identical to an IR drop of the second signal transmission path, and a signal transmission direction of the first signal transmission path is different from a signal transmission direction of the second signal transmission path.