Memory Arrays, and Methods of Forming Memory Arrays

27:

• An assembly comprising:
• an active material structure including a bit contact region and a cell contact region;
• a first redistribution pad coupled with the bit contact region;
• a second redistribution pad coupled with the cell contact region;
• a bitline over the active material structure and electrically connected with the first redistribution pad;
• a programmable device over the active material structure and electrically connected with the second redistribution pad;
• and
• wherein the first redistribution pad is horizontally expanded relative to the bit contact region to allow the bitline to be horizontally offset relative to the bit contact region.

35:

• A memory array, comprising:
• wordlines extending along a first direction;
• bitlines extending along a second direction that crosses the first direction;
• active material structures at regions where the wordlines and bitlines cross one another, each of the active material structures having a bit contact region and a cell contact region;
• first redistribution pads coupled with the bit contact regions;
• second redistribution pads coupled with the cell contact regions;
• each of the bit contact regions being coupled with an associated one of the bitlines at least partially through one of the first redistribution pads;
• the first redistribution pads being horizontally expanded relative to the bit contact regions to allow the associated bitlines to be horizontally offset relative to the bit contact regions;
• programmable devices coupled with the cell contact regions at least partially through the second redistribution pads;
• the active material structures comprising a first material;
• and
• the first and second redistribution pads comprising a second material which is different from the first material.

42:

• A method of forming a DRAM array, comprising:
• forming active material structures which each have a bit contact region and a cell contact region;
• the active material structures being arranged in an array having rows and columns;
• the rows extending along a first direction, and the columns extending along a second direction which intersects the first direction;
• forming first redistribution material over the active material structures;
• forming first protective material over the first redistribution material;
• patterning the first redistribution material and the first protective material into stripes which extend along the second direction, the stripes being over the cell contact regions and not over the bit contact regions;
• forming second protective material along sides of the stripes;
• the first protective material, second protective and first redistribution material of the stripes together forming first linear structures that extend along the second direction and over the cell contact regions;
• first trenches being between the first linear structures, and the bit contact regions being exposed within the first trenches;
• forming second redistribution material within the first trenches between the first linear structures;
• the second redistribution material being configured as second linear structures extending along the second direction;
• forming second trenches through the first and second linear structures and extending along the first direction, the second trenches cutting the second redistribution material of the second linear structures into first redistribution pads, and cutting the first redistribution material of the first linear structures into second redistribution pads;
• forming wordlines within the second trenches;
• forming third protective material within the second trenches and over the wordlines;
• forming bitlines extending along the second direction and coupled with the first redistribution pads;
• and
• forming programmable devices coupled with the second redistribution pads.