Pixel structure

A the pixel structure, comprising:

• a first substrate having a surface;
• a thin film transistor disposed on the surface of the first substrate, the thin film transistor comprising a gate, a source, a drain, a gate insulating layer and a semiconductive active layer, wherein the gate, the source and the drain overlap a portion of the semiconductive active layer in a direction perpendicular to the surface respectively, the gate insulating layer is disposed between the gate and the semiconductive active layer, the semiconductive active layer has a channel region disposed between the source and the drain, the channel region comprises a main channel region and at least one sub channel region, a channel length of the main channel region is less than a channel length of the at least one sub channel region, and the channel length of the main channel region is equal to a minimum of a channel length of the channel region, wherein the channel length of the channel region is referred to a distance of the channel region from the drain to the source;
• a first transparent conductive layer disposed on the thin film transistor, the first transparent conductive layer covering at least a portion of the at least one sub channel region, wherein the first transparent conductive layer has an opening exposing the main channel region;
• a second substrate disposed on the surface of the first substrate;
• and
• a liquid crystal layer disposed between the first substrate and the second substrate.