Semiconductor device structures for burn-in testing and methods thereof

A semiconductor device structure, comprising:

• a substrate;
• a plurality of electrical connection structures extending upwardly from an upper surface of the substrate by a first height;
• a plurality of contact pads disposed on the upper surface of the substrate on opposing sides of the plurality of electrical connection structures, each contact pad having a solder-wettable surface with an area configured to support a solder ball having a second height greater than the first height;
• and
• a plurality of fuse elements, each fuse element having a first end electrically coupled to a corresponding one of the plurality of electrical connection structures and a second end electrically coupled to a corresponding one of the plurality of contact pads.

A method of testing a semiconductor device including a substrate with a plurality of electrical connection structures extending upwardly from an upper surface of the substrate by a first height, the method comprising:

• disposing, on a plurality of contact pads electrically coupled to corresponding ones of the plurality of electrical connection structures and disposed on the upper surface of the substrate, a corresponding plurality of solder balls having a second height greater than the first height;
• connecting, to the plurality of solder balls, a test structure;
• and
• electrically testing circuits of the semiconductor device through the test structure.