Method of identifying defect regions in wafer
AssigneeSK Siltron Co., Ltd.
InventorJae Hyeong LEE
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Abstract
A method of identifying a wafer defect region is disclosed. The method includes preparing a sample wafer, forming a primary oxide film on the sample wafer at a temperature of 800° C. to 1000° C., forming a secondary oxide film on the primary oxide film at a temperature of 1000° C. to 1100° C., forming a tertiary oxide film on the secondary oxide film at a temperature of 1100° C. to 1200° C., removing the primary to tertiary oxide films, etching one surface of the sample wafer from which the primary to tertiary oxide films are removed to form haze on one surface of the sample wafer, and identifying a defect region of the sample wafer based on the haze.
Claims13
A method of identifying a wafer defect region, the method comprising:
- preparing a sample wafer;
- forming a primary oxide film on the sample wafer at a temperature of 800° C. to 1000° C.;
- forming a secondary oxide film on the primary oxide film at a temperature of 1000° C. to 1100° C.;
- forming a tertiary oxide film on the secondary oxide film at a temperature of 1100° C. to 1200° C.;
- removing the primary to tertiary oxide films;
- etching one surface of the sample wafer, from which the primary to tertiary oxide films are removed, to form haze on the one surface of the sample wafer;
- and
- identifying a defect region of the sample wafer based on the haze.
A method of identifying a wafer defect region, the method comprising:
- preparing a sample wafer;
- forming a primary oxide film on the sample wafer using a dry oxidation process in a first temperature hold period, the forming of the primary oxide film including a first temperature increase period in which temperature increases to a first target temperature and the first temperature hold period in which the first target temperature is maintained;
- forming a secondary oxide film on the primary oxide film using a dry oxidation process in a second temperature increase period and a second temperature hold period, the forming of the secondary oxide film including the second temperature increase period in which temperature increases to a second target temperature from the first target temperature and the second temperature hold period in which the target temperature is maintained;
- forming a tertiary oxide film on the secondary oxide film using a wet oxidation process in a third temperature increase period and a third temperature hold period, the forming of the tertiary oxide film including the third temperature increase period in which temperature increases to a third target temperature from the second target temperature and the third temperature hold period in which the third target temperature is maintained;
- removing the primary to tertiary oxide films;
- etching one surface of the sample wafer, from which the primary to tertiary oxide films are removed, to form haze on the one surface of the sample wafer;
- and
- identifying a defect region of the sample wafer based on the haze.
A method of identifying a wafer defect region, the method comprising:
- preparing a sample wafer;
- forming a primary oxide film on the sample wafer using a dry oxidation process at a first target temperature;
- forming a secondary oxide film on the primary oxide film using a dry oxidation process at a temperature between the first target temperature and a higher second target temperature than the first target temperature;
- forming a tertiary oxide film on the secondary oxide film using a wet oxidation process at a temperature between the second target temperature and a higher third target temperature than the second target temperature;
- removing the primary to tertiary oxide films;
- etching one surface of the sample wafer, from which the primary to tertiary oxide films are removed, to form haze on the one surface of the sample wafer;
- and
- identifying a defect region of the sample wafer based on the haze,
- wherein the first target temperature is 850° C. to 900° C., the second target temperature is 950° C. to 1050° C., and the third target temperature is 1100° C. to 1200° C.
Dependencies are inferred from the claim text.